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NTE Electronics, Inc. NTE199

NTE Electronics, Inc. - NTE199 - TRANSISTOR NPN SILICON 70V IC-0.1A LO NOISE HI-GAIN PRE-AMP View larger image View larger image
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NTE Electronics, Inc. TRANSISTOR NPN SILICON 70V IC-0.1A LO NOISE HI-GAIN PRE-AMP
Mfr. Part#:
NTE199

Allied Stock#: 70214932

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$1.17 (Each)
1$1.170
Availability

207 can ship immediately.

2365 can ship in 10 days.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: Transistor Series
Complement to: PNP
Configuration: Common Base
Current, Collector: 100 mA
Current, Continuous Collector: 100 mA
Current, Gain: 400
Device Dissipation: 0.36 W
Dimensions: 5.2 x 4.2 x 5.33 mm
Frequency, Operating: 90 MHz
Height: 0.21" (5.33mm)
Length: 0.204" (5.2mm)
Material: Si
Material Type: Silicon
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-92
Polarity: NPN
Power Dissipation: 260 mW
Primary Type: Si
Temperature Range, Junction, Operating: -55 to 125 °C
Temperature, Operating, Maximum: +125 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +125 °C
Transistor Polarity: NPN
Transistor Type: NPN
Type: Amplifier, High Gain
Voltage, Breakdown, Collector to Emitter: 50 V
Voltage, Collector to Base: 70 V
Voltage, Collector to Emitter: 50 V
Voltage, Collector to Emitter, Saturation: 0.125 V
Voltage, Emitter to Base: 5 V
Voltage, Saturation, Base to Emitter: 0.78 V
Width: 0.165" (4.2mm)

Overview

Silicon NPN Transistor Low Noises