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International Rectifier SI4420DYPBF

International Rectifier - SI4420DYPBF - SI4420DYPBF N-channel MOSFET Transistor,  12.5 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier SI4420DYPBF N-channel MOSFET Transistor, 12.5 A, 30 V, 8-Pin SOIC
Mfr. Part#:
SI4420DYPBF

Allied Stock#: 70018693

 RoHS Compliant Part

 

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View SI4420DYPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.76 (Each)
1$1.760
10$0.940
100$0.830
500$0.780
1000$0.740
2500$0.710
5000$0.680
Availability

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Minimum Quantity: 3800 |  Multiples Of: 95

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2240 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 12.5 A
Dimensions: 5.00 x 4.00 x 1.5 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.013 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 55 ns
Time, Turn-On Delay: 15 ns
Transconductance, Forward: 29 S
Typical Gate Charge @ Vgs: 52 nC @ 10 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.