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International Rectifier SI4410DYPBF

International Rectifier - SI4410DYPBF - SI4410DYPBF N-channel MOSFET Transistor,  10 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier SI4410DYPBF N-channel MOSFET Transistor, 10 A, 30 V, 8-Pin SOIC
Mfr. Part#:
SI4410DYPBF

Allied Stock#: 70018692

 RoHS Compliant Part

 

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View SI4410DYPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.48 (Each)
1$1.480
10$0.750
100$0.630
500$0.590
1000$0.560
2500$0.510
10000$0.490
Availability

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Minimum Quantity: 3800 |  Multiples Of: 95

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1585 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 10 A
Dimensions: 5 x 4 x 1.5 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.02 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 38 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 35 S
Typical Gate Charge @ Vgs: 30 nC @ 10 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.1 V
Voltage, Gate to Source: ± 20 V
Width: 0.157" (4mm)

Overview

N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.