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International Rectifier SI4410DYPBF

International Rectifier - SI4410DYPBF - SI4410DYPBF N-channel MOSFET Transistor,  10 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier SI4410DYPBF N-channel MOSFET Transistor, 10 A, 30 V, 8-Pin SOIC
Mfr. Part#:

Allied Stock#: 70018692

 RoHS Compliant Part



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Minimum Quantity: 3800 |  Multiples Of: 95


Brand/Series: HEXFET Series
Capacitance, Input: 1585 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 10 A
Dimensions: 5 x 4 x 1.5 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.02 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 38 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 35 S
Typical Gate Charge @ Vgs: 30 nC @ 10 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.1 V
Voltage, Gate to Source: ± 20 V
Width: 0.157" (4mm)


N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.