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International Rectifier IRS2011PBF

International Rectifier - IRS2011PBF - IRS2011PBF,  Dual MOSFET Power Driver 1A,  -0.3 - 220 V,  8-Pin PDIP View larger image View larger image
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International Rectifier IRS2011PBF, Dual MOSFET Power Driver 1A, -0.3 - 220 V, 8-Pin PDIP
Mfr. Part#:

Allied Stock#: 70018585

 RoHS Compliant Part

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Pricing (USD) & Availability
Special Pricing
$1.43 (Each)
1$1.426(Save 55%)
2500$1.410(Save 56%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$3.17 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HVIC Series
Configuration: Non-Inverting
Current, Input Bias: 10 (High), 5 (Low) μA
Current, Output: 1 A
Current, Output, Limiting: A
Current, Peak: 1 (High), 1 (Low) A
Delay, Propagation, Turn-Off: 60 ns
Delay, Propagation, Turn-On: 60 ns
Dimensions: 10.92 x 7.11 x 4.94 mm
Driver Type: High & Low Side
Fall Time: Maximum of 35 ns
Height: 0.194" (4.94mm)
High and Low Sides Dependency: Independent
Input Logic Compatibility: CMOS, LSTTL
Length: 0.429" (10.92mm)
Mounting Type: Through Hole
Number of Drivers: 2
Number of Outputs: 2
Number of Pins: 8
Operating Voltage Range: 10 to 20 V
Package Type: PDIP
Power Dissipation: 1 W
Temperature, Ambient, Maximum: +125 °
Temperature, Ambient, Minimum: –40 °
Temperature, Operating: -40 to +125 decC
Temperature, Operating, Maximum: +125 °C
Temperature, Operating, Minimum: -40 °C
Temperature, Operating, Range: -40 to +125 °C
Thermal Resistance, Junction to Ambient: 125 °C/W
Time Delay: 80 (Turn-Off), 80 (Turn-On)
Time, Fall, Turn-Off: 15 ns
Time, Rise: Maximum of 40 ns
Time, Rise, Turn-On: 25 ns
Transistor Type: MOSFET
Voltage, Input Offset: 200 V
Voltage, Output: 20 V
Voltage, Output, High Level: 1.4 V
Voltage, Output, Low Level: 0.1 V
Width: 0.28" (7.11mm)


The IRS2011 is a high power, high speed power MOSFET driver with independent high- and low-side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

  • Floating Channel Designed for Bootstrap Operation
  • Fully Operational to +200 V
  • Gate Drive Supply Range from 10 to 20 V
  • Matched Propagation Delay for Both Channels

  • *Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.