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International Rectifier IRLZ44NSPBF

International Rectifier - IRLZ44NSPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 0.022Ohm; ID 47A; D2Pak; PD 110W; VGS +/-16V; -55 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.022Ohm; ID 47A; D2Pak; PD 110W; VGS +/-16V; -55
Mfr. Part#:
IRLZ44NSPBF

Allied Stock#: 70017122

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 136.
Pricing (USD) & Availability
Standard Pricing
$2.08 (Each)
1$2.081
10$1.104
100$0.977
500$0.920
1000$0.885
2500$0.851
5000$0.805
Availability

136 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1700 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Current, Drain: 47 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 48 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.035 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 26 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 21 sec
Typical Gate Charge @ Vgs: Maximum of 48 nC @ 5 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.38" (9.65mm)

Overview

N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.