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International Rectifier IRLZ34NPBF

International Rectifier - IRLZ34NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 0.035Ohm; ID 30A; TO-220AB; PD 68W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.035Ohm; ID 30A; TO-220AB; PD 68W; VGS +/-16V
Mfr. Part#:
IRLZ34NPBF

Allied Stock#: 70017120

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 1292.
Pricing (USD) & Availability
Standard Pricing
$1.89 (Each)
1$1.886
10$0.949
100$0.805
500$0.757
1000$0.709
2500$0.661
10000$0.625
Availability

1292 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 880 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 30 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 25 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 68 W
Resistance, Drain to Source On: 0.06 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 21 ns
Time, Turn-On Delay: 8.9 ns
Transconductance, Forward: 11 sec
Typical Gate Charge @ Vgs: Maximum of 25 nC @ 5 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 16 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 30A to 39A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.