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International Rectifier IRLU024NPBF

International Rectifier - IRLU024NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 17A; I-Pak (TO-251AA); PD 45W View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 17A; I-Pak (TO-251AA); PD 45W
Mfr. Part#:
IRLU024NPBF

Allied Stock#: 70017115

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$0.330 (Each)
1650$0.330
Availability

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Minimum Quantity: 1650 |  Multiples Of: 75

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 480 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 17 A
Dimensions: 6.73 x 2.39 x 6.22 mm
Gate Charge, Total: 15 nC
Height: 6.22 mm
Length: 6.73 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: I-PAK
Polarization: N-Channel
Power Dissipation: 45 W
Resistance, Drain to Source On: 0.11 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 20 ns
Time, Turn-On Delay: 7.1 ns
Transconductance, Forward: 8.3 sec
Typical Gate Charge @ Vgs: Maximum of 15 nC @ 5 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.094" (2.39mm)

Overview

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.