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International Rectifier IRLR7807ZPBF

International Rectifier - IRLR7807ZPBF - IRLR7807ZPBF N-channel MOSFET Transistor,  43 A,  30 V,  3-Pin DPAK View larger image View larger image
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International Rectifier IRLR7807ZPBF N-channel MOSFET Transistor, 43 A, 30 V, 3-Pin DPAK
Mfr. Part#:

Allied Stock#: 70018004

 RoHS Compliant Part



View IRLR7807ZPBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 3170.
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$1.12 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 780 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 43 A
Dimensions: 6.73 x 6.22 x 2.26 mm
Height: 2.26 mm
Length: 6.73 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Power Dissipation: 40 W
Resistance, Drain to Source On: 18.2
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 9.8 ns
Time, Turn-On Delay: 7.1 ns
Transconductance, Forward: 51 S
Typical Gate Charge @ Vgs: 7 nC @ 4.5 V
Voltage, Diode Forward: 1 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)


N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.