Infineon IRLR120NTRPBF
MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 0.185Ohm,ID 10A,D-Pak (TO-252AA),PD 48W
Mfr. Part #: IRLR120NTRPBF / RS Stock #: 70017828
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Price
Qty.
Standard Price
2000
$0.65
4000
$0.58
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Dual Drain
Drain Current
10 A
Drain to Source On Resistance
0.265 Ω
Drain to Source Voltage
100 V
Forward Transconductance
3.1 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±16 V
Input Capacitance
440 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
N-Channel
Power Dissipation
48 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
20 nC
Turn Off Delay Time
23 ns
Turn On Delay Time
4 ns
Typical Gate Charge @ Vgs
Maximum of 20 nC @ 5 V
Voltage, Breakdown, Drain to Source
100 V
Overview
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.