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International Rectifier IRLMS2002TRPBF

International Rectifier - IRLMS2002TRPBF - MOSFET,  Power; N-Ch; VDSS 20V; RDS(ON) 0.03Ohm; ID 6.5A; Micro6; PD 2W; VGS +/-12V; -55d View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.03Ohm; ID 6.5A; Micro6; PD 2W; VGS +/-12V; -55d
Mfr. Part#:

Allied Stock#: 70017108

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 243.
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$0.730 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1310 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 6.5 A
Dimensions: 3.00 x 1.75 x 1.15 mm
Gate Charge, Total: 15 nC
Height: 1.15 mm
Length: 3 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-23
Polarization: N-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.045 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 36 ns
Time, Turn-On Delay: 8.5 ns
Transconductance, Forward: 13 S
Typical Gate Charge @ Vgs: 15 nC @ 5 V
Voltage, Breakdown, Drain to Source: 20 V
Voltage, Diode Forward: 1.2 V
Voltage, Drain to Source: 20 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±12 V
Width: 0.069" (1.75mm)


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.