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International Rectifier IRLML6401TRPBF

International Rectifier - IRLML6401TRPBF - MOSFET,  Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V
Mfr. Part#:
IRLML6401TRPBF

Allied Stock#: 70017403

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 2393.
Pricing (USD) & Availability
Standard Pricing
$0.211 (Each)
1$0.211
10$0.154
100$0.145
1000$0.116
Availability

2393 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 830 pF @ -10 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -3.4 A
Dimensions: 3.04 x 1.40 x 1.02 mm
Gate Charge, Total: 10 nC
Height: 1.02 mm
Length: 3.04 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: Micro3
Polarization: P-Channel
Power Dissipation: 1.3 W
Resistance, Drain to Source On: 0.085 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 32 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 8.6 S
Typical Gate Charge @ Vgs: 10 nC @ -5 V
Voltage, Breakdown, Drain to Source: -12 V
Voltage, Drain to Source: -12 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ± 8 V
Width: 0.055" (1.4mm)

Overview

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device
for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3™ allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Features:
  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1 mm)
  • Available in Tape and Reel
  • Fast Switching
  • 1.8 V Gate Rated