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International Rectifier IRLML6302TRPBF

International Rectifier - IRLML6302TRPBF - MOSFET,  Power; P-Ch; VDSS -20V; RDS(ON) 0.6Ohm; ID -0.78A; Micro3; PD 540mW; VGS +/-12V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.6Ohm; ID -0.78A; Micro3; PD 540mW; VGS +/-12V
Mfr. Part#:
IRLML6302TRPBF

Allied Stock#: 70017107

 RoHS Compliant Part

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Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 97 pF @ -15 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -0.62 A
Dimensions: 3.04 x 1.40 x 1.02 mm
Gate Charge, Total: 2.4 nC
Height: 1.02 mm
Length: 3.04 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: Micro3
Polarization: P-Channel
Power Dissipation: 540 W
Resistance, Drain to Source On: 0.9 Ω
Resistance, Thermal, Junction to Case: 230 °C/W
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 22 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 0.56 S
Typical Gate Charge @ Vgs: 2.4 nC @ -4.5 V
Voltage, Breakdown, Drain to Source: -20 V
Voltage, Drain to Source: -20 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ± 12 V
Width: 0.055" (1.4mm)