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International Rectifier IRLL024NTRPBF

International Rectifier - IRLL024NTRPBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 0.065Ohm;  ID 4.4A;  SOT-223;  PD 2.1W;  VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
Mfr. Part#:

Allied Stock#: 70017816

 RoHS Compliant Part



View IRLL024NTRPBF Datasheet Datasheet

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$0.215 (Each)

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Minimum Quantity: 2500 |  Multiples Of: 2500


Brand/Series: HEXFET Series
Capacitance, Input: 510 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 4.4 A
Dimensions: 6.70 x 3.70 x 1.45 mm
Gate Charge, Total: 10.4 nC
Height: 0.057" (1.45mm)
Length: 0.263" (6.7mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-223
Polarization: N-Channel
Power Dissipation: 2.1 W
Resistance, Drain to Source On: 0.1 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 18 ns
Time, Turn-On Delay: 7.4 ns
Transconductance, Forward: 3.3 S
Typical Gate Charge @ Vgs: 10.4 nC @ 5 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±16 V
Width: 0.146" (3.7mm)


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
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