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International Rectifier IRL530NPBF

International Rectifier - IRL530NPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 17A; TO-220AB; PD 79W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 17A; TO-220AB; PD 79W; VGS +/-16V
Mfr. Part#:
IRL530NPBF

Allied Stock#: 70017093

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 638.
Pricing (USD) & Availability
Standard Pricing
$1.81 (Each)
1$1.809
10$0.911
100$0.765
500$0.729
1000$0.680
2500$0.619
10000$0.595
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 800 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 17 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 34 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 79 W
Resistance, Drain to Source On: 0.15 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 30 ns
Time, Turn-On Delay: 7.2 ns
Transconductance, Forward: 7.7 S
Typical Gate Charge @ Vgs: Maximum of 34 nC @ 5 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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