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International Rectifier IRL520NPBF

International Rectifier - IRL520NPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 0.18Ohm; ID 10A; TO-220AB; PD 48W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.18Ohm; ID 10A; TO-220AB; PD 48W; VGS +/-16V
Mfr. Part#:

Allied Stock#: 70017091

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 1197.
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$1.58 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 440 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 10 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 20 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 48 W
Resistance, Drain to Source On: 0.22 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 4 ns
Transconductance, Forward: 3.1 S
Typical Gate Charge @ Vgs: Maximum of 20 nC @ 5 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.185" (4.69mm)


N-Channel Power MOSFET 8A to 12A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.