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International Rectifier IRL2910STRRPBF

International Rectifier - IRL2910STRRPBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 0.026Ohm; ID 55A; D2Pak; PD 200W; VGS +/-16V
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.026Ohm; ID 55A; D2Pak; PD 200W; VGS +/-16V
Mfr. Part#:
IRL2910STRRPBF

Allied Stock#: 70017806

 RoHS Compliant Part

 

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View IRL2910STRRPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.30 (Each)
800$1.300
1600$1.250
2400$1.220
Availability

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Minimum Quantity: 800 |  Multiples Of: 800

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 3700 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 55 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 140 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 0.04 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 49 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 28 S
Typical Gate Charge @ Vgs: Maximum of 140 nC @ 5 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.38" (9.65mm)