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International Rectifier IRL2703PBF

International Rectifier - IRL2703PBF - MOSFET,  Power; N-Ch; VDSS 30V; RDS(ON) 0.04Ohm; ID 24A; TO-220AB; PD 45W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.04Ohm; ID 24A; TO-220AB; PD 45W; VGS +/-16V
Mfr. Part#:
IRL2703PBF

Allied Stock#: 70017480

 RoHS Compliant Part

 

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View IRL2703PBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 109.
Pricing (USD) & Availability
Standard Pricing
$1.56 (Each)
1$1.560
10$0.830
100$0.730
500$0.690
1000$0.660
2500$0.630
5000$0.600
Availability

109 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 450 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 24 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 15 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 45 W
Resistance, Drain to Source On: 0.04 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 12 ns
Time, Turn-On Delay: 8.5 ns
Transconductance, Forward: 6.4 S
Typical Gate Charge @ Vgs: Maximum of 15 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 20A to 29A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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