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International Rectifier IRL2505PBF

International Rectifier - IRL2505PBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 0.008Ohm;  ID 104A;  TO-220AB;  PD 200W;  VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ohm; ID 104A; TO-220AB; PD 200W; VGS +/-16V
Mfr. Part#:
IRL2505PBF

Allied Stock#: 70017478

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 39.
Pricing (USD) & Availability
Standard Pricing
$3.31 (Each)
1$3.308
10$1.764
100$1.555
500$1.457
1000$1.391
2500$1.336
5000$1.271
Availability

39 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 5000 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 104 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 130 nC
Height: 0.6" (15.24mm)
Length: 0.414" (10.54mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 0.013 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: +55 °C
Temperature, Operating, Range: 55 to +175 °C
Time, Turn-Off Delay: 43 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 59 S
Typical Gate Charge @ Vgs: Maximum of 130 nC @ 5 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 16 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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