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International Rectifier IRL2203NSPBF

International Rectifier - IRL2203NSPBF - MOSFET,  Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
Mfr. Part#:

Allied Stock#: 70017615

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 331.
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$2.61 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 3290 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 116 A
Dimensions: 10.67 x 9.65 x 4.576 mm
Gate Charge, Total: 60 nC
Height: 4.576 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 180 W
Resistance, Drain to Source On: 7
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 11 ns
Transconductance, Forward: 73 S
Typical Gate Charge @ Vgs: 60 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Diode Forward: 1.2 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±16 V
Width: 0.38" (9.65mm)


N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.