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International Rectifier IRL1004SPBF

International Rectifier - IRL1004SPBF - MOSFET,  Power; N-Ch; VDSS 40V; RDS(ON) 0.0065Ohm; ID 130A; D2Pak; PD 200W; VGS +/-16V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0065Ohm; ID 130A; D2Pak; PD 200W; VGS +/-16V
Mfr. Part#:
IRL1004SPBF

Allied Stock#: 70017210

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$1.86 (Each)
350$1.860
Availability

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Minimum Quantity: 350 |  Multiples Of: 50

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 5330 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 130 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 100 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 0.009 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 25 ns
Time, Turn-On Delay: 16 ns
Transconductance, Forward: 63 sec
Typical Gate Charge @ Vgs: 100 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 40 V
Voltage, Drain to Source: 40 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±16 V
Width: 0.38" (9.65mm)

Overview

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features:
  • Logic-Level Gate Drive
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
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