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International Rectifier IRFZ48VPBF

International Rectifier - IRFZ48VPBF - MOSFET,  Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 72A; TO-220AB; PD 150W; gFS 35S View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 72A; TO-220AB; PD 150W; gFS 35S
Mfr. Part#:

Allied Stock#: 70017802

 RoHS Compliant Part



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  • This item may not be backordered online. Maximum order amount is 1470.
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$1.95 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1985 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 72 A
Dimensions: 10.66 x 4.82 x 16.51 mm
Gate Charge, Total: 110 nC
Height: 16.51 mm
Length: 10.66 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 150 W
Resistance, Drain to Source On: 12
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 157 ns
Time, Turn-On Delay: 7.6 ns
Transconductance, Forward: 35 S
Typical Gate Charge @ Vgs: Maximum of 110 nC @ 10 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Diode Forward: 2 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 2 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.82mm)


N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.