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International Rectifier IRFZ48NPBF

International Rectifier - IRFZ48NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; TO-220AB; PD 130W; gFS 24S View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 14 Milliohms; ID 64A; TO-220AB; PD 130W; gFS 24S
Mfr. Part#:
IRFZ48NPBF

Allied Stock#: 70017058

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 448.
Pricing (USD) & Availability
Standard Pricing
$1.68 (Each)
1$1.676
10$0.894
100$0.792
500$0.740
1000$0.699
2500$0.679
5000$0.648
Availability

448 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1970 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 64 A
Dimensions: 10.67 x 4.83 x 16.51 mm
Gate Charge, Total: 81 nC
Height: 16.51 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 130 W
Resistance, Drain to Source On: 14
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 34 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 24 S
Typical Gate Charge @ Vgs: Maximum of 81 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

Overview

N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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