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International Rectifier IRFZ46NPBF

International Rectifier - IRFZ46NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 16.5 Milliohms; ID 53A; TO-220AB; PD 107W; -55de
Mfr. Part#:
IRFZ46NPBF

Allied Stock#: 70017057

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 464.
Pricing (USD) & Availability
Standard Pricing
$2.08 (Each)
1$2.080
10$1.050
100$0.880
500$0.840
1000$0.790
2500$0.710
10000$0.690
Availability

464 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1696 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 53 A
Dimensions: 10.66 x 4.82 x 16.51 mm
Gate Charge, Total: 72 nC
Height: 16.51 mm
Length: 10.66 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 107 W
Resistance, Drain to Source On: 16.5
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 52 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 19 S
Typical Gate Charge @ Vgs: Maximum of 72 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 20 V
Width: 0.19" (4.82mm)

Overview

N-Channel Power MOSFET 50A to 59A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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