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International Rectifier IRFZ44ZPBF

International Rectifier - IRFZ44ZPBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 11.1 Milliohms;  ID 51A;  TO-220AB;  PD 80W;  -55deg View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11.1 Milliohms; ID 51A; TO-220AB; PD 80W; -55deg
Mfr. Part#:
IRFZ44ZPBF

Allied Stock#: 70017225

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 29.
Pricing (USD) & Availability
Standard Pricing
$1.72 (Each)
1$1.720
10$0.870
100$0.730
500$0.690
1000$0.650
2500$0.580
10000$0.570
Availability

29 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1420 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 51 A
Dimensions: 10.67 x 4.83 x 9.65 mm
Gate Charge, Total: 29 nC
Height: 0.38" (9.65mm)
Length: 0.42" (10.67mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 80 W
Resistance, Drain to Source On: 13.9
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 33 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 22 sec
Typical Gate Charge @ Vgs: 29 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

Overview

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed Up to Tj Max.
  • Lead-Free
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