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International Rectifier IRFZ44VZPBF

International Rectifier - IRFZ44VZPBF - MOSFET,  Power; N-Ch; VDSS 60V; RDS(ON) 9.6Milliohms; ID 57A; TO-220AB; PD 92W; gFS 25S View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 9.6Milliohms; ID 57A; TO-220AB; PD 92W; gFS 25S
Mfr. Part#:
IRFZ44VZPBF

Allied Stock#: 70016927

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.719 (Each)
1$0.719(Save 65%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.05 (Each)
1$2.050
10$1.090
100$0.970
500$0.910
1000$0.870
2500$0.830
5000$0.790
Availability

805 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Application: For automotive applications
Brand/Series: HEXFET Series
Capacitance, Input: 1690 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 57 A
Dimensions: 10.66 x 4.82 x 16.51 mm
Fall Time: 38 ns (Typ.)
Gate Charge, Total: 43 nC
Height: 0.65" (16.51mm)
Length: 0.419" (10.66mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to +175 °C (Max.)
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 230 W
Resistance, Drain to Source On: 12
Resistance, Thermal, Junction to Case: 1.64 °C⁄W (Max.)
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Thermal Resistance, Junction to Ambient: 62 °C⁄W
Time, Turn-Off Delay: 35 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 25 S
Typical Gate Charge @ Vgs: 43 nC @ 10 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.82mm)

Overview

Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF
  • Advanced process technology
  • Ultra low on-resistance
  • 175 °C operating temperature
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
  • Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature
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    *Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.