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International Rectifier IRFZ44EPBF

International Rectifier - IRFZ44EPBF - MOSFET,  Power; N-Ch; VDSS 60V; RDS(ON) 0.023Ohm; ID 48A; TO-220AB; PD 110W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.023Ohm; ID 48A; TO-220AB; PD 110W; VGS +/-20V
Mfr. Part#:
IRFZ44EPBF

Allied Stock#: 70017053

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 200.
Pricing (USD) & Availability
Standard Pricing
$1.90 (Each)
1$1.896
10$1.011
100$0.896
500$0.839
1000$0.805
2500$0.770
5000$0.736
Availability

200 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1360 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 48 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 60 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.023 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 70 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 15 S
Typical Gate Charge @ Vgs: Maximum of 60 nC @ 10 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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