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International Rectifier IRFZ34NPBF

International Rectifier - IRFZ34NPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ohm; ID 29A; TO-220AB; PD 68W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ohm; ID 29A; TO-220AB; PD 68W; VGS +/-20V
Mfr. Part#:
IRFZ34NPBF

Allied Stock#: 70017051

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 1006.
Pricing (USD) & Availability
Standard Pricing
$1.60 (Each)
1$1.598
10$0.805
100$0.678
500$0.644
1000$0.598
2500$0.563
10000$0.529
Availability

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 700 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 29 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 34 nC
Height: 15.24 mm
Length: 10.54 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 68 W
Resistance, Drain to Source On: 0.04 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 31 ns
Time, Turn-On Delay: 7 ns
Transconductance, Forward: 6.5 S
Typical Gate Charge @ Vgs: Maximum of 34 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.6 V
Voltage, Gate to Source: ± 20 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 20A to 29A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.