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International Rectifier IRFZ24NPBF

International Rectifier - IRFZ24NPBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 0.07Ohm;  ID 17A;  TO-220AB;  PD 45W;  VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.07Ohm; ID 17A; TO-220AB; PD 45W; VGS +/-20V
Mfr. Part#:
IRFZ24NPBF

Allied Stock#: 70017049

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 126.
Pricing (USD) & Availability
Standard Pricing
$1.40 (Each)
1$1.404
10$0.713
100$0.598
500$0.564
1000$0.529
2500$0.483
10000$0.460
Availability

126 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 370 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 17 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 20 nC
Height: 0.6" (15.24mm)
Length: 0.414" (10.54mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 45 W
Resistance, Drain to Source On: 0.07 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 19 ns
Time, Turn-On Delay: 4.9 ns
Transconductance, Forward: 4.5 S
Typical Gate Charge @ Vgs: Maximum of 20 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.185" (4.69mm)

Overview

N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.