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International Rectifier IRFS4310PBF

International Rectifier - IRFS4310PBF - MOSFET,  Power; N-Ch; VDSS 100V; RDS(ON) 5.6 Milliohms; ID 130A; D2Pak; PD 300W; VF 1.3V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 5.6 Milliohms; ID 130A; D2Pak; PD 300W; VF 1.3V
Mfr. Part#:
IRFS4310PBF

Allied Stock#: 70017258

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 174.
Pricing (USD) & Availability
Standard Pricing
$5.29 (Each)
1$5.290
10$3.040
100$2.880
250$2.690
500$2.570
1000$2.480
2500$2.360
Availability

174 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 7670 pF @ 50 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 130 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 170 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 300 W
Resistance, Drain to Source On: 7
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 68 ns
Time, Turn-On Delay: 26 ns
Transconductance, Forward: 160 sec
Typical Gate Charge @ Vgs: 170 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

Overview

N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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