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International Rectifier IRFR6215PBF

International Rectifier - IRFR6215PBF - MOSFET,  Power; P-Ch; VDSS -150V; RDS(ON) 0.295Ohm; ID -13A; D-Pak (TO-252AA); PD 110W View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.295Ohm; ID -13A; D-Pak (TO-252AA); PD 110W
Mfr. Part#:

Allied Stock#: 70017197

 RoHS Compliant Part



View IRFR6215PBF Datasheet Datasheet

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Pricing (USD) & Availability
Special Pricing
$0.466 (Each)
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Standard Pricing
$1.56 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 860 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -13 A
Dimensions: 6.73 x 6.22 x 2.39 mm
Gate Charge, Total: 66 nC
Height: 0.094" (2.39mm)
Length: 0.264" (6.73mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Polarization: P-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.58 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 53 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 3.6 sec
Typical Gate Charge @ Vgs: Maximum of 66 nC @ -10 V
Voltage, Breakdown, Drain to Source: -150 V
Voltage, Drain to Source: -150 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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