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International Rectifier IRFR5505TRPBF

International Rectifier - IRFR5505TRPBF - MOSFET,  Power; P-Ch; VDSS -55V; RDS(ON) 0.11Ohm; ID -18A; D-Pak (TO-252AA); PD 57W View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.11Ohm; ID -18A; D-Pak (TO-252AA); PD 57W
Mfr. Part#:
IRFR5505TRPBF

Allied Stock#: 70017781

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 4.
Pricing (USD) & Availability
Standard Pricing
$1.13 (Each)
1$1.130
10$0.500
100$0.380
1000$0.360
2000$0.320
10000$0.310
24000$0.300
Availability

4 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 650 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -18 A
Dimensions: 6.73 x 6.22 x 2.39 mm
Gate Charge, Total: 32 nC
Height: 2.39 mm
Length: 6.73 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Polarization: P-Channel
Power Dissipation: 57 W
Resistance, Drain to Source On: 0.11 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 20 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 4.2 S
Typical Gate Charge @ Vgs: Maximum of 32 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Drain to Source: -55 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)

Overview

HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.