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International Rectifier IRFR5305PBF

International Rectifier - IRFR5305PBF - MOSFET,  Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ohm; ID -31A; D-Pak (TO-252AA); PD 110W View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ohm; ID -31A; D-Pak (TO-252AA); PD 110W
Mfr. Part#:
IRFR5305PBF

Allied Stock#: 70017043

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 55.
Pricing (USD) & Availability
Standard Pricing
$0.700 (Each)
1$0.700
10$0.590
100$0.557
1000$0.480
Availability

55 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1200 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -31 A
Dimensions: 10.41 x 6.73 x 2.39 mm
Gate Charge, Total: 63 nC
Height: 0.094" (2.39mm)
Length: 0.409" (10.41mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Polarization: P-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 0.065 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 39 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 8 S
Typical Gate Charge @ Vgs: 63 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Drain to Source: -55 V
Voltage, Forward, Diode: -1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.265" (6.73mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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