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International Rectifier IRFR3518PBF

International Rectifier - IRFR3518PBF - IRFR3518PBF N-channel MOSFET Transistor,  38 A,  80 V,  3-Pin DPAK View larger image View larger image
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International Rectifier IRFR3518PBF N-channel MOSFET Transistor, 38 A, 80 V, 3-Pin DPAK
Mfr. Part#:

Allied Stock#: 70018321

 RoHS Compliant Part



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Minimum Quantity: 6000 |  Multiples Of: 75


Brand/Series: HEXFET Series
Capacitance, Input: 1710 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 38 A
Dimensions: 6.73 x 6.22 x 2.26 mm
Height: 2.26 mm
Length: 6.73 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Power Dissipation: 110 W
Resistance, Drain to Source On: 29
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 37 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 34 S
Typical Gate Charge @ Vgs: 37 nC @ 10 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 80 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)


N-Channel Power MOSFET 30A to 39A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.