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International Rectifier IRFR2307ZPBF

International Rectifier - IRFR2307ZPBF - MOSFET,  Power; N-Ch; VDSS 75V; RDS(ON) 12.8 Milliohms; ID 42A; D-Pak (TO-252AA); -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 12.8 Milliohms; ID 42A; D-Pak (TO-252AA); -55de
Mfr. Part#:
IRFR2307ZPBF

Allied Stock#: 70017250

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.656 (Each)
1$0.656(Save 61%)
5000$0.650(Save 61%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.68 (Each)
1$1.680
10$0.900
100$0.790
500$0.740
1000$0.710
2500$0.680
5000$0.650
Availability

2264 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 2190 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 53 A
Dimensions: 6.73 x 6.22 x 2.39 mm
Gate Charge, Total: 50 nC
Height: 0.094" (2.39mm)
Length: 0.264" (6.73mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Polarization: N-Channel
Power Dissipation: 110 W
Resistance, Drain to Source On: 16
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 44 ns
Time, Turn-On Delay: 16 ns
Transconductance, Forward: 30 sec
Typical Gate Charge @ Vgs: 50 nC @ 10 V
Voltage, Breakdown, Drain to Source: 75 V
Voltage, Drain to Source: 75 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.