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International Rectifier IRFR1010ZPBF

International Rectifier - IRFR1010ZPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 5.8Milliohms; ID 42A; D-Pak (TO-252AA); -55deg View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 5.8Milliohms; ID 42A; D-Pak (TO-252AA); -55deg
Mfr. Part#:

Allied Stock#: 70017236

 RoHS Compliant Part

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$2.03 (Each)

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Brand/Series: HEXFET Series
Capacitance, Input: 2840 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 91 A
Dimensions: 6.73 x 6.22 x 2.39 mm
Gate Charge, Total: 63 nC
Height: 2.39 mm
Length: 6.73 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Polarization: N-Channel
Power Dissipation: 140 W
Resistance, Drain to Source On: 7.5
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 42 ns
Time, Turn-On Delay: 17 ns
Transconductance, Forward: 31 sec
Typical Gate Charge @ Vgs: 63 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)


N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.