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International Rectifier IRFP260NPBF

International Rectifier - IRFP260NPBF - MOSFET,  Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ohm; ID 50A; TO-247AC; PD 300W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ohm; ID 50A; TO-247AC; PD 300W; VGS +/-20V
Mfr. Part#:
IRFP260NPBF

Allied Stock#: 70017036

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 2312.
Pricing (USD) & Availability
Standard Pricing
$3.55 (Each)
1$3.550
10$2.040
100$1.930
250$1.810
500$1.730
1000$1.670
2500$1.580
Availability

2312 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 4057 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 50 A
Dimensions: 15.90 x 5.30 x 20.30 mm
Gate Charge, Total: 234 nC
Height: 20.3 mm
Length: 15.9 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-247AC
Polarization: N-Channel
Power Dissipation: 300 W
Resistance, Drain to Source On: 0.04 Ω
Resistance, Thermal, Junction to Case: 0.5 °C/W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 55 ns
Time, Turn-On Delay: 17 ns
Transconductance, Forward: 27 S
Typical Gate Charge @ Vgs: Maximum of 234 nC @ 10 V
Voltage, Breakdown, Drain to Source: 200 V
Voltage, Drain to Source: 200 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 20 V
Width: 0.209" (5.3mm)

Overview

N-Channel Power MOSFET 50A to 59A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.