Infineon IRFP150NPBF
MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 0.036Ohm,ID 42A,TO-247AC,PD 160W,VGS +/-20V
Mfr. Part #: IRFP150NPBF / RS Stock #: 70017034
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
1
$2.17
10
$2.06
50
$1.96
100
$1.85
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Single
Drain Current
42 A
Drain to Source On Resistance
0.036 Ohms
Drain to Source Voltage
100 V
Forward Transconductance
14 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
20 V
Input Capacitance
1900 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
160 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
110 nC
Turn Off Delay Time
45 ns
Turn On Delay Time
11 ns
Typical Gate Charge @ Vgs
Maximum of 110 nC @ 10 V
Voltage, Breakdown, Drain to Source
100 V
Overview
N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
