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International Rectifier IRFL4315PBF

International Rectifier - IRFL4315PBF - MOSFET,  Power; N-Ch; VDSS 150V; RDS(ON) 185 Milliohms; ID 2.6A; SOT-223; PD 2.8W; -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 185 Milliohms; ID 2.6A; SOT-223; PD 2.8W; -55de
Mfr. Part#:
IRFL4315PBF

Allied Stock#: 70017029

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 4402.
Pricing (USD) & Availability
Standard Pricing
$1.12 (Each)
1$1.120
10$0.500
100$0.380
1000$0.360
2500$0.320
10000$0.310
25000$0.290
Availability

4402 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 420 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 2.6 A
Dimensions: 6.70 x 3.70 x 1.45 mm
Gate Charge, Total: 12 nC
Height: 1.45 mm
Length: 6.7 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-223
Polarization: N-Channel
Power Dissipation: 2.8 W
Resistance, Drain to Source On: 185
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 20 ns
Time, Turn-On Delay: 8.4 ns
Transconductance, Forward: 3.5 S
Typical Gate Charge @ Vgs: 12 nC @ 10 V
Voltage, Breakdown, Drain to Source: 150 V
Voltage, Drain to Source: 150 V
Voltage, Forward, Diode: 1.5 V
Voltage, Gate to Source: ±30 V
Width: 0.146" (3.7mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
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