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International Rectifier IRFL4105PBF

International Rectifier - IRFL4105PBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ohm; ID 3.7A; SOT-223; PD 1W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ohm; ID 3.7A; SOT-223; PD 1W; VGS +/-20V
Mfr. Part#:

Allied Stock#: 70017599

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 313.
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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 660 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 5.2 A
Dimensions: 6.70 x 3.70 x 1.45 mm
Gate Charge, Total: 23 nC
Height: 1.45 mm
Length: 6.7 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-223
Polarization: N-Channel
Power Dissipation: 2.1 W
Resistance, Drain to Source On: 0.045 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 19 ns
Time, Turn-On Delay: 7.1 ns
Transconductance, Forward: 3.8 S
Typical Gate Charge @ Vgs: 23 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.146" (3.7mm)


N-Channel Power MOSFET up to 7A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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