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International Rectifier IRFL024ZPBF

International Rectifier - IRFL024ZPBF - MOSFET,  Power; N-Ch; VDSS 55V; RDS(ON) 46.2 Milliohms; ID 5.1A; SOT-223; PD 1W; VF 1.3V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 46.2 Milliohms; ID 5.1A; SOT-223; PD 1W; VF 1.3V
Mfr. Part#:
IRFL024ZPBF

Allied Stock#: 70017223

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 1853.
Pricing (USD) & Availability
Standard Pricing
$1.02 (Each)
1$1.020
10$0.450
100$0.350
1000$0.330
2500$0.290
10000$0.280
25000$0.270
Availability

1853 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 340 pF @ 25V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 5.1 A
Dimensions: 6.70 x 3.70 x 1.45 mm
Gate Charge, Total: 9.1 nC
Height: 1.45 mm
Length: 6.7 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-223
Polarization: N-Channel
Power Dissipation: 2.8 W
Resistance, Drain to Source On: 57.5
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 30 ns
Time, Turn-On Delay: 7.8 ns
Transconductance, Forward: 6.2 sec
Typical Gate Charge @ Vgs: 9.1 nC @ 10V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.146" (3.7mm)

Overview

N-Channel Power MOSFET up to 7A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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