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International Rectifier IRFH5250DTRPBF

International Rectifier - IRFH5250DTRPBF - MOSFET,  N-Channel,  25V FETky,  100A,  1.4mOhm,  39 nC Qg,  PQFN View larger image View larger image
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International Rectifier MOSFET, N-Channel, 25V FETky, 100A, 1.4mOhm, 39 nC Qg, PQFN
Mfr. Part#:

Allied Stock#: 70019247

 RoHS Compliant Part


View IRFH5250DTRPBF Datasheet Datasheet

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Brand/Series: HEXFET Series
Capacitance, Input: 6115 pF @ 13 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 100 A
Dimensions: 6.00 x 5.00 x 0.85 mm
Gate Charge, Total: 83 nC
Height: 0.85 mm
Length: 6 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: PQFN
Polarization: N-Channel
Power Dissipation: 156 W
Resistance, Drain to Source On: 2.2
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 35 °C/W
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 23 ns
Transconductance, Forward: 120 S
Typical Gate Charge @ Vgs: 39 nC @ 4.5 V, 83 nC @ 10 V
Voltage, Breakdown, Drain to Source: 25 V
Voltage, Diode Forward: 0.6, 1 V
Voltage, Drain to Source: 25 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.197" (5mm)