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International Rectifier IRFB4227PBF

International Rectifier - IRFB4227PBF - MOSFET,  Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W
Mfr. Part#:
IRFB4227PBF

Allied Stock#: 70017362

 RoHS Compliant Part

 

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View IRFB4227PBF Datasheet Datasheet

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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 730.
Pricing (USD) & Availability
Standard Pricing
$3.41 (Each)
1$3.410
10$1.960
100$1.850
250$1.740
500$1.670
1000$1.600
2500$1.520
Availability

730 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 4600 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 65 A
Dimensions: 10.66 x 4.82 x 16.51 mm
Gate Charge, Total: 70 nC
Height: 16.51 mm
Length: 10.66 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 330 W
Resistance, Drain to Source On: 24
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -40 °C
Temperature, Operating, Range: -40 to +175 °C
Time, Turn-Off Delay: 21 ns
Time, Turn-On Delay: 33 ns
Transconductance, Forward: 49 S
Typical Gate Charge @ Vgs: 70 nC @ 10 V
Voltage, Breakdown, Drain to Source: 200 V
Voltage, Drain to Source: 200 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ± 30 V
Width: 0.19" (4.82mm)

Overview

"This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications."
"Features:
  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications
  • Low E pulse rating to reduce power dissipation in PDP applications
  • Low Qg for fast Response
  • High Repetitive Peak current capability for reliable operation
  • Short fall & rise times for fast switching
  • 175 degC operating junction temperature for improved ruggedness
  • Repetitive Avalanche capability for robustness and reliability"
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