All Products

International Rectifier IRFB3207PBF

International Rectifier - IRFB3207PBF - MOSFET,  Power; N-Ch; VDSS 75V; RDS(ON) 3.6Milliohms; ID 180A; TO-220AB; PD 330W; -55de View larger image View larger image
Image may be a representation.
See specs for product details.

International Rectifier MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 3.6Milliohms; ID 180A; TO-220AB; PD 330W; -55de
Mfr. Part#:

Allied Stock#: 70016923

 RoHS Compliant Part

View More from International Rectifier >>
  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 9.
Pricing (USD) & Availability
Standard Pricing
$5.39 (Each)

9 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1


Application: High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits
Brand/Series: HEXFET Series
Capacitance, Input: 7600 pF @ 50 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 170 A
Dimensions: 10.66 x 4.82 x 9.02 mm
Fall Time: 74 ns (Typ.)
Gate Charge, Total: 180 nC
Height: 9.02 mm
Length: 10.66 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to +175 °C (Max.)
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 300 W
Resistance, Drain to Source On: 4.5
Resistance, Thermal, Junction to Case: 0.45 °C⁄W (Max.)
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Thermal Resistance, Junction to Ambient: 62 °C⁄W
Time, Turn-Off Delay: 68 ns
Time, Turn-On Delay: 29 ns
Transconductance, Forward: 150 S
Typical Gate Charge @ Vgs: 180 nC @ 10 V
Voltage, Breakdown, Drain to Source: 75 V
Voltage, Diode Forward: 1.3 V
Voltage, Drain to Source: 75 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.82mm)


Power MOSFET, Pulsed Drain Current 720 A, Input Capacitance 7600 pF
  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Lead-free
    300 °C soldering temperature for 10 seconds and 10 lbs.-in. mounting torque (6-32 or M3 screw).
  • People Also Bought
    * Products listed as “People Also Bought” are not recommended accessories and may not be compatible with the primary product.