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International Rectifier IRF9Z34NPBF

International Rectifier - IRF9Z34NPBF - MOSFET,  Power;  P-Ch;  VDSS -55V;  RDS(ON) 0.1Ohm;  ID -19A;  TO-220AB;  PD 68W;  VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.1Ohm; ID -19A; TO-220AB; PD 68W; VGS +/-20V
Mfr. Part#:
IRF9Z34NPBF

Allied Stock#: 70017018

 RoHS Compliant Part

 
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  • For additional quantity inquiries, please contact your local sales office.
  • This item may not be backordered online. Maximum order amount is 301.
Pricing (USD) & Availability
Standard Pricing
$1.73 (Each)
1$1.728
10$0.876
100$0.734
500$0.698
1000$0.651
2500$0.592
10000$0.568
Availability

301 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -19 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 35 nC
Length: 0.414" (10.54mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: P-Channel
Power Dissipation: 68 W
Resistance, Drain to Source On: 0.1 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Time, Turn-Off Delay: 30 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 4.2 S
Typical Gate Charge @ Vgs: Maximum of 35 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: -1.6 V

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.