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International Rectifier IRF9Z24NSTRLPBF

International Rectifier - IRF9Z24NSTRLPBF - IRF9Z24NSTRLPBF P-channel MOSFET Transistor,  12 A,  55 V,  3+Tab-Pin D2PAK View larger image View larger image
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International Rectifier IRF9Z24NSTRLPBF P-channel MOSFET Transistor, 12 A, 55 V, 3+Tab-Pin D2PAK
Mfr. Part#:
IRF9Z24NSTRLPBF

Allied Stock#: 70018983

 RoHS Compliant Part

 

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Pricing (USD) & Availability
Standard Pricing
$1.88 (Each)
1$1.880
10$0.950
100$0.800
500$0.760
800$0.710
2400$0.650
9600$0.620
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Minimum Quantity: 800 |  Multiples Of: 800

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 350 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -12 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Power Dissipation: 45 W
Resistance, Drain to Source On: 0.175 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 2.5 S
Typical Gate Charge @ Vgs: Maximum of 19 nC @ -10 V
Voltage, Drain to Source: -55 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)

Overview

HEXFET® P-Channel Power MOSFETs, Infineon
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.