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International Rectifier IRF9Z24NPBF

International Rectifier - IRF9Z24NPBF - MOSFET,  Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ohm; ID -12A; TO-220AB; PD 45W; VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ohm; ID -12A; TO-220AB; PD 45W; VGS +/-20V
Mfr. Part#:
IRF9Z24NPBF

Allied Stock#: 70017017

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 246.
Pricing (USD) & Availability
Standard Pricing
$1.56 (Each)
1$1.560
10$0.790
100$0.660
500$0.620
1000$0.580
2500$0.540
10000$0.510
Availability

246 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 350 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -8.5 A
Dimensions: 10.54 x 4.69 x 15.24 mm
Gate Charge, Total: 19 nC
Height: 0.6" (15.24mm)
Length: 0.414" (10.54mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: P-Channel
Power Dissipation: 45 W
Resistance, Drain to Source On: 0.175 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 13 ns
Transconductance, Forward: 2.5 S
Typical Gate Charge @ Vgs: Maximum of 19 nC @ -10 V
Voltage, Breakdown, Drain to Source: -55 V
Voltage, Drain to Source: -55 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.185" (4.69mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.