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International Rectifier IRF9956TRPBF

International Rectifier - IRF9956TRPBF - MOSFET,  Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.1Ohm; ID 3.5A; SO-8; PD 2W; VGS +/-20V
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International Rectifier MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.1Ohm; ID 3.5A; SO-8; PD 2W; VGS +/-20V
Mfr. Part#:
IRF9956TRPBF

Allied Stock#: 70017734

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$1.03 (Each)
1$1.030
10$0.460
100$0.350
1000$0.330
4000$0.300
8000$0.290
24000$0.270
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Minimum Quantity: 4000 |  Multiples Of: 4000

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 190 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 3.5 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 6.9 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: Dual N-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.2 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 13 ns
Time, Turn-On Delay: 6.2 ns
Transconductance, Forward: 12 S
Typical Gate Charge @ Vgs: 6.9 nC @ 10 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)