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International Rectifier IRF9953TRPBF

International Rectifier - IRF9953TRPBF - IRF9953TRPBF Dual P-channel MOSFET Transistor,  2.3 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF9953TRPBF Dual P-channel MOSFET Transistor, 2.3 A, 30 V, 8-Pin SOIC
Mfr. Part#:
IRF9953TRPBF

Allied Stock#: 70017733

 RoHS Compliant Part

 

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View IRF9953TRPBF Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.02 (Each)
1$1.020
10$0.450
100$0.350
1000$0.330
4000$0.290
8000$0.280
24000$0.270
Availability

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Minimum Quantity: 4000 |  Multiples Of: 4000

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 190 pF @ -15 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -2.3 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 6.1 nC
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: P-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.4
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 62.5 °C/W
Time, Turn-Off Delay: 20 ns
Time, Turn-On Delay: 9.7 ns
Transconductance, Forward: -2.4 S
Typical Gate Charge @ Vgs: 6.1 nC @ -10 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

  • Generation V Technology
  • Ultra Low On-Resistance
  • Dual P-Channel MOSFET
  • Surface Mount
  • Very Low Gate Charge and Switching Losses
  • Full Avalanche Rated
  • Lead-Free