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International Rectifier IRF9530NSPBF

International Rectifier - IRF9530NSPBF - MOSFET,  Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ohm; ID -14A; D2Pak; PD 79W; VGS +/-20V; -55 View larger image View larger image
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International Rectifier MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.2Ohm; ID -14A; D2Pak; PD 79W; VGS +/-20V; -55
Mfr. Part#:

Allied Stock#: 70017012

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 1794.
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$1.03 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 760 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Dual Drain
Current, Drain: -14 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 58 nC
Height: 4.83 mm
Length: 10.67 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: P-Channel
Power Dissipation: 79 W
Resistance, Drain to Source On: 0.2 Ω
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 45 ns
Time, Turn-On Delay: 15 ns
Transconductance, Forward: 3.2 S
Typical Gate Charge @ Vgs: Maximum of 58 nC @ -10 V
Voltage, Breakdown, Drain to Source: -100 V
Voltage, Drain to Source: -100 V
Voltage, Forward, Diode: -1.6 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.