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International Rectifier IRF9333PBF

International Rectifier - IRF9333PBF - IRF9333PBF P-channel MOSFET Transistor, 9.2 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF9333PBF P-channel MOSFET Transistor, 9.2 A, 30 V, 8-Pin SOIC
Mfr. Part#:
IRF9333PBF

Allied Stock#: 70019296

 RoHS Compliant Part

 

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View IRF9333PBF Datasheet Datasheet

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  • This item may not be backordered online. Maximum order amount is 29.
Pricing (USD) & Availability
Standard Pricing
$0.990 (Each)
1$0.990
10$0.440
100$0.340
1000$0.320
2500$0.280
10000$0.270
25000$0.260
Availability

29 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 1110 pF @ -25 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain, Triple Source
Current, Drain: -9.2 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Height: 1.5 mm
Length: 5 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 32.5
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 55 ns
Time, Turn-On Delay: 16 ns
Transconductance, Forward: 13 S
Typical Gate Charge @ Vgs: 14 nC @ -4.5 V, 25 nC @ -10 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.